器件名称: H2N6668
功能描述: PNP EPITAXIAL PLANAR TRANSISTOR
文件大小: 34.04KB 共3页
简 介:HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6754-A Issued Date : 1998.07.01 Revised Date : 1999.08.01 Page No. : 1/3
H2N6668
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The H2N6668 is designed for general-purpose amplifier and switching applications.
Absolute Maximum Ratings (Ta=25°C)
Maximum Temperatures Storage Temperature ............................................................................................... -55~+150°C Junction Temperature ..................................................................................... +150°C Maximum Maximum Power Dissipation Total Power Dissipation (Tc=25°C) ..................................................................................... 65 W Maximum Voltages and Currents BVCBO Collector to Base Voltage ..................................................................................... -80 V BVCEO Collector to Emitter Voltage.................................................................................. -80 V BVEBO Emitter to Base Voltage .......................................................................................... -5 V IC Collector Current ........................................................................................................... -10 A
Characteristics (Ta=25°C)
Symbol BVCBO *BVCEO IEBO ICEO ICEV *VCE(sat)1 *VCE(sat)2 VBE(on)1 VBE(on)2 *hFE1 *hFE2 Min. -80 -80 1 100 Typ. Max. -100 -1 -300 -2 -3 -2.8 -4.5 20 Unit V V mA mA uA V V V V K Test Conditions IC=-10mA IC=-200mA VEB=……
