器件名称: H2N6520
功能描述: PNP EPITAXIAL PLANAR TRANSISTOR
文件大小: 36.83KB 共3页
简 介:HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6274-B Issued Date : 1994.11.18 Revised Date : 2000.09.28 Page No. : 1/3
H2N6520
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The H2N6520 is designed for general purpose applications requiring high breakdown voltages.
Features
High Collector-Emitter Breakdown Voltage Low Collector-Emitter Saturation Voltage The H2N6520 is complementary to H2N6517
Absolute Maximum Ratings
Maximum Temperatures Storage Temperature ....................................................................................................... -55 ~ +150 °C Junction Temperature ............................................................................................... +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (Ta=25°C)............................................................................................ 625 mW Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage.................................................................................................. -350 V VCEO Collector to Emitter Voltage............................................................................................... -350 V VEBO Emitter to Base Voltage......................................................................................................... -5 V IC Collector Current ................................................................................................................. -500 mA IB Base Current .....……
