器件名称: H2N6517
功能描述: NPN EPITAXIAL PLANAR TRANSISTOR
文件大小: 41.26KB 共4页
简 介:HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6268-B Issued Date : 1993.10.05 Revised Date : 2000.09.25 Page No. : 1/4
H2N6517
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The H2N6517 is designed for general purpose applications requiring high breakdown voltages.
Features
High Collector-Emitter Breakdown Voltage Low Collector-Emitter Saturation Voltage The H2N6517 is complementary to H2N6520
Absolute Maximum Ratings
Maximum Temperatures Storage Temperature ....................................................................................................... -55 ~ +150 °C Junction Temperature ............................................................................................... +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (Ta=25°C)............................................................................................ 625 mW Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage................................................................................................... 350 V VCEO Collector to Emitter Voltage................................................................................................ 350 V VEBO Emitter to Base Voltage.......................................................................................................... 5 V IC Collector Current .................................................................................................................. 500 mA IB Base Current .....……
