器件名称: H2N6427
功能描述: NPN EPITAXIAL PLANAR TRANSISTOR
文件大小: 35.2KB 共3页
简 介:HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6523 Issued Date : 1992.11.25 Revised Date : 2001.06.06 Page No. : 1/3
HSC1815
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HSC1815 is designed for use in driver stage of AF amplifier general purpose amplification.
Absolute Maximum Ratings
Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature ................................................................................... +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ............................................................................... 400 mW Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage ........................................................................................ 60 V VCEO Collector to Emitter Voltage ..................................................................................... 50 V VEBO Emitter to Base Voltage ............................................................................................. 5 V IC Collector Current ....................................................................................................... 150 mA IB Base Current ............................................................................................................... 50 mA
Characteristics (Ta=25°C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE1 *hFE2 fT Cob ……
