器件名称: H2N6426
功能描述: NPN EPITAXIAL PLANAR TRANSISTOR
文件大小: 35.21KB 共3页
简 介:HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6232-B Issued Date : 1998.01.09 Revised Date : 2000.09.15 Page No. : 1/3
H2N6426
NPN EPITAXIAL PLANAR TRANSISTOR
Description
Darlington Transistor
Absolute Maximum Ratings
Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature ................................................................................... +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ............................................................................... 625 mW Maximum Voltages and Currents (Ta=25°C) BVCEO Collector to Emitter Voltage................................................................................... 40 V BVCBO Collector to Base Voltage ...................................................................................... 40 V BVEBO Emitter to Base Voltage ......................................................................................... 12 V IC Collector Current ....................................................................................................... 500 mA
Characteristics (Ta=25°C)
Symbol BVCEO BVCBO BVEBO ICEO ICBO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat) VBE(on) *hFE1 *hFE2 *hFE3 Cob Min. 40 40 12 20 30 20 Typ. 0.71 0.9 1.52 1.24 5.4 Max. 1.0 50 50 1.2 1.5 2.0 1.75 200 300 200 7.0 Unit V V V uA nA nA V V V V K K K pF Test Conditions IC=10mA, IB=0 IC=100uA, IE=0 I……
