器件名称: H2N6388
功能描述: NPN EPITAXIAL PLANAR TRANSISTOR
文件大小: 35.07KB 共3页
简 介:HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6714-C Issued Date : 1992.12.15 Revised Date : 1999.08.01 Page No. : 1/3
H2N6388
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The H2N6388 is designed for general-purpose amplifier and switching applications.
Absolute Maximum Ratings (Ta=25°C)
Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature ................................................................................... +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (Tc=25°C) .................................................................................... 65 W Total Power Dissipation (Ta=25°C) ...................................................................................... 2 W Maximum Voltages and Currents BVCBO Collector to Base Voltage ...................................................................................... 80 V BVCEO Collector to Emitter Voltage................................................................................... 80 V BVEBO Emitter to Base Voltage ........................................................................................... 5 V IC Collector Current ............................................................................................................ 10 A
Characteristics (Ta=25°C)
Symbol BVCBO *BVCEO ICBO IEBO ICEO ICEV *VCE(sat)1 *VCE(sat)2 *VCE(sat)3 *VBE(sat) VBE(on)1 ……
