器件名称: H2N5551
功能描述: NPN EPITAXIAL PLANAR TRANSISTOR
文件大小: 37.78KB 共4页
简 介:HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6219 Issued Date : 1992.09.21 Revised Date : 2002.02.20 Page No. : 1/4
H2N5551
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The H2N5551 is designed for amplifier transistor.
Features
Complements to PNP Type H2N5401 High Collector-Emitter Breakdown Voltage (VCEO>160V (@IC=1mA))
TO-92
Absolute Maximum Ratings
Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature .................................................................................... +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ................................................................................ 625 mW Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage ....................................................................................... 180 V VCEO Collector to Emitter Voltage .................................................................................... 160 V VEBO Emitter to Base Voltage .............................................................................................. 6 V IC Collector Current ....................................................................................................... 600 mA
Characteristics (Ta=25°C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat)1 *VBE(sat)2 *hFE1 *hFE2 *hFE3 fT Cob Min. 180 160 6 80 80 50 100 Typ. ……
