器件名称: H2N5401
功能描述: PNP EPITAXIAL PLANAR TRANSISTOR
文件大小: 38.23KB 共4页
简 介:HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6203 Issued Date : 1992.09.22 Revised Date : 2002.02.20 Page No. : 1/4
H2N5401
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The H2N5401 is designed for general purpose applications requiring high breakdown voltages.
Features
Complements to NPN Type H2N5551 High Collector-Emitter Breakdown Voltage (VCEO=150V (@IC=1mA))
TO-92
Absolute Maximum Ratings
Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature .................................................................................... +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ................................................................................ 625 mW Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage ...................................................................................... -160 V VCEO Collector to Emitter Voltage ................................................................................... -150 V VEBO Emitter to Base Voltage ............................................................................................. -5 V IC Collector Current....................................................................................................... -600 mA
Characteristics (Ta=25°C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat)1 *VBE(sat)2 *hFE1 *hFE2 *hF……
