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H2N5366

器件名称: H2N5366
功能描述: PNP EPITAXIAL PLANAR TRANSISTOR
文件大小: 35.59KB    共3页
生产厂商: HSMC
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简  介:HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6275-A Issued Date : 1999.02.01 Revised Date : 2000.09.15 Page No. : 1/3 H2N5366 PNP EPITAXIAL PLANAR TRANSISTOR Description The H2N5366 is designed for general purpose applications requiring high breakdown voltages. Features This device was designed for use as general purpose amplifier and switches. Absolute Maximum Ratings Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature ................................................................................... +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ............................................................................... 400 mW Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage ....................................................................................... -40 V VCEO Collector to Emitter Voltage .................................................................................... -40 V VEBO Emitter to Base Voltage ............................................................................................ -4 V IC Collector Current ...................................................................................................... -500 mA Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat)1 *VBE(sat)2 *hFE1 *hFE2 *hFE3 fT Cob Min. -40 -40 -4 80……
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H2N5366 PNP EPITAXIAL PLANAR TRANSISTOR HSMC
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