器件名称: H2N5366
功能描述: PNP EPITAXIAL PLANAR TRANSISTOR
文件大小: 35.59KB 共3页
简 介:HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6275-A Issued Date : 1999.02.01 Revised Date : 2000.09.15 Page No. : 1/3
H2N5366
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The H2N5366 is designed for general purpose applications requiring high breakdown voltages.
Features
This device was designed for use as general purpose amplifier and switches.
Absolute Maximum Ratings
Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature ................................................................................... +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ............................................................................... 400 mW Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage ....................................................................................... -40 V VCEO Collector to Emitter Voltage .................................................................................... -40 V VEBO Emitter to Base Voltage ............................................................................................ -4 V IC Collector Current ...................................................................................................... -500 mA
Characteristics (Ta=25°C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat)1 *VBE(sat)2 *hFE1 *hFE2 *hFE3 fT Cob Min. -40 -40 -4 80……