器件名称: H2N5089
功能描述: NPN EPITAXIAL PLANAR TRANSISTOR
文件大小: 35.79KB 共3页
简 介:HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6273-B Issued Date : 1993.12.08 Revised Date : 2000.09.15 Page No. : 1/3
H2N5089
NPN EPITAXIAL PLANAR TRANSISTOR
Description
Amplifier Transistor.
Absolute Maximum Ratings
Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature ................................................................................... +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ............................................................................... 350 mW Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage ........................................................................................ 30 V VCEO Collector to Emitter Voltage ..................................................................................... 25 V VEBO Emitter to Base Voltage .......................................................................................... 4.5 V IC Collector Current ......................................................................................................... 50 mA
Characteristics (Ta=25°C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) VBE(on) *hFE1 *hFE2 *hFE3 fT Cob Min. 30 25 4.5 400 450 400 50 Typ. Max. 50 100 0.5 0.8 1200 4.0 Unit V V V nA nA V V Test Conditions IC=100uA, IE=0 IC=1mA, IB=0 IE=10uA, IC=0 VCB=15V, IE=0 VEB=4.5V, IC=0 IC=10mA, IB=1mA IC=10mA, IB=5……
