器件名称: H2N5088
功能描述: NPN EPITAXIAL PLANAR TRANSISTOR
文件大小: 35.29KB 共3页
简 介:HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6227-B Issued Date : 1993.04.12 Revised Date : 2000.09.15 Page No. : 1/3
H2N5088
NPN EPITAXIAL PLANAR TRANSISTOR
Description
This device was designed for low noise, high gain , general purpose amplifier applications for 1uA to 25mA collector current.
Absolute Maximum Ratings
Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature ................................................................................... +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ............................................................................... 350 mW Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage ........................................................................................ 35 V VCEO Collector to Emitter Voltage ..................................................................................... 30 V VEBO Emitter to Base Voltage .......................................................................................... 4.5 V IC Collector Current ......................................................................................................... 50 mA
Characteristics (Ta=25°C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) VBE(on) *hFE1 *hFE2 *hFE3 fT Cob Min. 35 30 4.5 300 350 300 50 Typ. Max. 50 50 0.5 0.8 900 4.0 Unit V V V nA nA V V Test Condition……
