器件名称: H2N5087
功能描述: PNP EPITAXIAL PLANAR TRANSISTOR
文件大小: 39.23KB 共4页
简 介:HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6210-A Issued Date : 1998.02.01 Revised Date : 2000.09.15 Page No. : 1/4
H2N5087
PNP EPITAXIAL PLANAR TRANSISTOR
Description
This device was designed for low noise,high gain,general purpose amplifier applications for 1uA to 25mA collector current.
Absolute Maximum Ratings
Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature ................................................................................... +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ............................................................................... 625 mW Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage ....................................................................................... -50 V VCEO Collector to Emitter Voltage .................................................................................... -50 V VEBO Emitter to Base Voltage ............................................................................................ -3 V IC Collector Current ......................................................................................................... -50mA
Characteristics (Ta=25°C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) VBE(on) *hFE1 *hFE2 *hFE3 fT Cob Min. -50 -50 -3 250 250 250 40 Typ. Max. -50 -50 -0.3 -0.85 800 4.0 Unit V V V nA nA V V Test Condi……
