器件名称: H2N4401
功能描述: NPN EPITAXIAL PLANAR TRANSISTOR
文件大小: 40.16KB 共4页
简 介:HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6215 Issued Date : 1992.09.22 Revised Date : 2002.02.22 Page No. : 1/4
H2N4401
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The H2N4401 is designed for general purpose switching and amplifier applications.
Features
Complementary to H2N4403 High Power Dissipation : 625 mW at 25°C High DC Current Gain : 100-300 at 150mA High Breakdown Voltage : 40 V Min.
TO-92
Absolute Maximum Ratings
Maximum Temperatures Storage Temperature........................................................................................................ -55 ~ +150 °C Junction Temperature................................................................................................ +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (Ta=25°C).............................................................................................625 mW Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage .................................................................................................... 60 V VCEO Collector to Emitter Voltage ................................................................................................. 40 V VEBO Emitter to Base Voltage ......................................................................................................... 5 V IC Collector Current ................................................................................................................... 600 mA
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