器件名称: H2N4126
功能描述: PNP EPITAXIAL PLANAR TRANSISTOR
文件大小: 36.1KB 共3页
简 介:HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6216-B Issued Date : 1992.09.22 Revised Date : 2000.09.01 Page No. : 1/3
H2N4126
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The H2N4126 is designed for general purpose switching and amplifier applications.
Features
Complementary to H2N4124 High Power PT : 625mW at 25°C High DC Current Gain hFE : 120-360 at IC=2mA
Absolute Maximum Ratings
Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature ................................................................................... +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ............................................................................... 625 mW Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage ....................................................................................... -25 V VCEO Collector to Emitter Voltage .................................................................................... -25 V VEBO Emitter to Base Voltage ............................................................................................ -4 V IC Collector Current ...................................................................................................... -200 mA
Characteristics (Ta=25°C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE1 *hFE2 fT Cob Min. -25 -25 -4 120 60 250 Typ. ……
