器件名称: H2N4124
功能描述: NPN EPITAXIAL PLANAR TRANSISTOR
文件大小: 34.7KB 共3页
简 介:HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6240-B Issued Date : 1992.11.25 Revised Date : 2000.09.01 Page No. : 1/3
H2N4124
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The H2N4124 is designed for general purpose switching and amplifier applications.
Features
Complementary to H2N4126 Low Collector to Emitter Saturation Voltage
Absolute Maximum Ratings
Maximum Temperatures Storage Temperature............................................................................................ -55 ~ +150 °C Junction Temperature................................................................................... +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (Ta=25°C) .............................................................................. 350 mW Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage ........................................................................................ 30 V VCEO Collector to Emitter Voltage ..................................................................................... 25 V VEBO Emitter to Base Voltage ............................................................................................. 5 V IC Collector Current ....................................................................................................... 200 mA
Characteristics (Ta=25°C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE1 *hFE2 fT Cob Min. 30 25 5.0 120 60 300 Max. 50 50 0.3 950 360 4 Unit V V V nA nA……
