器件名称: H2N3906
功能描述: PNP EPITAXIAL PLANAR TRANSISTOR
文件大小: 37KB 共4页
简 介:HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6240 Issued Date : 1992.11.25 Revised Date : 2002.04.03 Page No. : 1/4
H2N3906
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The H2N3906 is designed for general purpose switching and amplifier applications.
Absolute Maximum Ratings
TO-92
Maximum Temperatures Storage Temperature ........................................................................................... -55 ~ +150 °C Junction Temperature.................................................................................... +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ............................................................................... 625 mW Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage ........................................................................................ -40 V VCEO Collector to Emitter Voltage..................................................................................... -40 V VEBO Emitter to Base Voltage............................................................................................. -5 V IC Collector Current ...................................................................................................... -200 mA
Characteristics (Ta=25°C)
Symbol BVCBO BVCEO BVEBO ICEX *VCE(sat)1 *VCE(sat)2 *VBE(sat)1 *VBE(sat)2 *hFE1 *hFE2 *hFE3 *hFE4 *hFE5 fT Cob Min. -40 -40 -5 -650 60 80 100 60 30 250 Typ. Max. -50 -250 -400 -850 -950 300 4 Unit V V V nA mV mV m……
