器件名称: H2N3904
功能描述: PNP EPITAXIAL PLANAR TRANSISTOR
文件大小: 36.38KB 共4页
简 介:HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6218 Issued Date : 1992.11.25 Revised Date : 2002.04.03 Page No. : 1/4
H2N3904
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The H2N3904 is designed for general purpose switching and amplifier applications.
Absolute Maximum Ratings
TO-92
Maximum Temperatures Storage Temperature ........................................................................................... -55 ~ +150 °C Junction Temperature.................................................................................... +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ............................................................................... 625 mW Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage ......................................................................................... 60 V VCEO Collector to Emitter Voltage...................................................................................... 40 V VEBO Emitter to Base Voltage.............................................................................................. 6 V IC Collector Current........................................................................................................ 200 mA
Characteristics (Ta=25°C)
Symbol BVCBO BVCEO BVEBO ICEX *VCE(sat)1 *VCE(sat)2 *VBE(sat)1 *VBE(sat)2 *hFE1 *hFE2 *hFE3 *hFE4 *hFE5 fT Cob Min. 60 40 6 650 40 70 100 60 30 300 Typ. Max. 50 200 300 850 950 300 4 Unit V V V nA mV mV mV mV Test……
