器件名称: H2N3417
功能描述: NPN SILICON TRANSISTOR
文件大小: 34.3KB 共3页
简 介:HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6267-B Issued Date : 1992.11.25 Revised Date : 2000.09.01 Page No. : 1/3
H2N3417
NPN SILICON TRANSISTOR
Description
The H2N3417 is a silicon NPN planar epitaxial transistor designed for small signal general purpose and switching applications.
Absolute Maximum Ratings
Maximum Temperatures Storage Temperature............................................................................................ -55 ~ +150 °C Junction Temperature................................................................................... +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (Ta=25°C) .............................................................................. 625 mW Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage ........................................................................................ 50 V VCEO Collector to Emitter Voltage ..................................................................................... 50 V VEBO Emitter to Base Voltage ............................................................................................. 5 V IC Collector Current ...................................................................................................... 500 mA
Characteristics (Ta=25°C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE Min. 50 50 5 180 Typ. Max. 100 100 300 850 540 Unit V V V nA nA mV mV Test Conditions IC=100uA, IE=0 IC=1mA, IB=0 IE=10uA, IC=0……
