器件名称: H2585
功能描述: PNP EPITAXIAL PLANAR TRANSISTOR
文件大小: 31.79KB 共3页
简 介:HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6715 Issued Date : 1996.02.01 Revised Date : 2001.05.28 Page No. : 1/3
H2585
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The H2585 is designed for use in low voltage and low drop out regulator applications.
Absolute Maximum Ratings
Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature ..................................................................................... 150 °C Maximum Maximum Power Dissipation Total Power Dissipation (Tc=25°C) .................................................................................... 40 W Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage ....................................................................................... -20 V VCEO Collector to Emitter Voltage .................................................................................... -15 V VEBO Emitter to Base Voltage ............................................................................................ -5 V IC Collector Current ............................................................................................................. -5 A
Characteristics (Ta=25°C)
Symbol *BVCEO BVCBO ICBO ICEO IEBO *VCE(sat)1 *VCE(sat)2 VBE(on) *hFE1 *hFE2 Cob Min. -15 -20 1 1 Typ. Max. -10 -20 -2 -1.5 -1.5 -2 60 60 100 Unit V V uA uA mA V V V K K pF Test Conditions IC=-100mA IC=-10mA VCB……
