器件名称: H2584
功能描述: PNP EPITAXIAL PLANAR TRANSISTOR
文件大小: 33.29KB 共3页
简 介:HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6716 Issued Date : 1996.02.01 Revised Date : 2002.02.18 Page No. : 1/3
H2584
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The H2584 is designed for use in low voltage and low dropout regulator applications.
Absolute Maximum Ratings
TO-220
Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature ...................................................................................... 150 °C Maximum Maximum Power Dissipation Total Power Dissipation (Tc=25°C) ..................................................................................... 65 W Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage ........................................................................................ -20 V VCEO Collector to Emitter Voltage..................................................................................... -15 V VEBO Emitter to Base Voltage............................................................................................. -5 V IC Collector Current ........................................................................................................... -10 A
Characteristics (Ta=25°C)
Symbol *BVCEO ICBO ICEO IEBO *VCE(sat) VBE(on) *hFE1 *hFE2 Min. -15 2 1 Typ. 15 Max. -10 -20 -2 -1.5 -2 60 60 Unit V uA uA mA V V K K Test Conditions IC=-100mA VCB=-20V VCE=-15V VEB=-5V IC=-10A, IB=-10……
