器件名称: H11G3
功能描述: HIGH VOLTAGE DARLINGTON OUTPUT OPTICALLY COUPLED ISOLATOR
文件大小: 56.46KB 共3页
简 介:H11G1X, H11G2X, H11G3X H11G1, H11G2, H11G3
HIGH VOLTAGE DARLINGTON OUTPUT OPTICALLY COUPLED ISOLATOR
APPROVALS l UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS l VDE 0884 in 2 available lead forms : - STD - G form
2.54 7.0 6.0 1.2 7.62 1 2 3
Dimensions in mm 6 5 4 7.62
6.62 4.0 DESCRIPTION 3.0 The H11G_ series are optically coupled isolators consisting of an infrared light emitting diode and 0.5 a high voltage NPN silicon photo darlington 3.0 which has an integral base-emitter resistor to 0.26 3.35 0.5 optimise switching speed and elevated temperature characteristics in a standard 6pin ABSOLUTE MAXIMUM RATINGS dual in line plastic package. (25°C unless otherwise specified)
13° Max
FEATURES Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. l High Isolation Voltage (5.3kVRMS ,7.5kVPK ) l High Current Transfer Ratio ( 1000% min) l High BVCEO (H11G1 - 100V min.) l Low collector dark current :100nA max. at 80V VCE l Low input current 1mA IF
l
Storage Temperature -55°C to + 150°C Operating Temperature -55°C to + 100°C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260°C INPUT DIODE Forward Current Peak Forward Current (1s pulse, 300pps) Reverse Voltage Power Dissipation OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO H11G3, H11G2, H11G1 Collector-base Voltage BVCBO H11G3, H11G2, H11G1 Emitter-baseVoltage BVECO Power Dissipation POWER DISSIPATION 55, 80, 100V 55, 80,……
