器件名称: H11G1SR2M
功能描述: High Voltage Photodarlington Optocouplers
文件大小: 139KB 共8页
简 介:H11G1M, H11G2M, H11G3M High Voltage Photodarlington Optocouplers
May 2007
H11G1M, H11G2M, H11G3M High Voltage Photodarlington Optocouplers
Features
■ High BVCEO
tm
General Description
The H11GXM series are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor which has an integral base-emitter resistor to optimize elevated temperature characteristics.
– Minimum 100V for H11G1M – Minimum 80V for H11G2M – Minimum 55V for H11G3M High sensitivity to low input current ■ (Min. 500% CTR at IF = 1mA) ■ Low leakage current at elevated temperature (Max. 100A at 80°C) ■ Underwriters Laboratory (UL) recognized File # E90700, Volume 2
Applications
■ CMOS logic interface ■ Telephone ring detector ■ Low input TTL interface ■ Power supply isolation ■ Replace pulse transformer
Schematic
ANODE 1
6 BASE
CATHODE 2
5 COLLECTOR
N/C 3
4 EMITTER
2007 Fairchild Semiconductor Corporation H11GXM Rev. 1.0.0
www.fairchildsemi.com
H11G1M, H11G2M, H11G3M High Voltage Photodarlington Optocouplers
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum r……
