器件名称: H11F3
功能描述: PHOTO FET OPTOCOUPLERS
文件大小: 403.29KB 共9页
简 介:PHOTO FET OPTOCOUPLERS
H11F1 H11F2 H11F3
PACKAGE SCHEMATIC
ANODE 1
6
OUTPUT TERM.
6 1
6
CATHODE 2 5
1
3 4 OUTPUT TERM.
6 1
DESCRIPTION
The H11F series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photodetector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level AC and DC analog signals. The H11F series devices are mounted in dual in-line packages.
FEATURES
As a remote variable resistor ≤ 100 to ≥ 300 M ≥ 99.9% linearity ≤ 15 pF shunt capacitance ≥ 100 G I/O isolation resistance As an analog switch Extremely low offset voltage 60 Vpk-pk signal capability No charge injection or latch-up ton, toff ≤ 15 S UL recognized (File #E90700) VDE recognized (File #E94766) – Ordering option ‘300’ (e.g. H11F1.300)
APPLICATIONS
As a variable resistor – Isolated variable attenuator Automatic gain control Active lter ne tuning/band switching As an analog switch – Isolated sample and hold circuit Multiplexed, optically isolated A/D conversion
2002 Fairchild Semiconductor Corporation
Page 1 of 9
6/24/02
PHOTO FET OPTOCOUPLERS
H11F1 H11F2 H11F3
Absolute Maximum Ratings (TA = 25°C unless otherwise specied)
Parameter TOTAL DEVICE Storage Temperature Operating Temperature Lead Solder Temperature EMITTER Continuous Forward Current Reverse Voltage Forward Current - Peak (10 s pulse, 1% duty cycle) LED Power Dissipation 25……
