器件名称: H11D1M
功能描述: High Voltage Phototransistor Optocouplers
文件大小: 228.9KB 共9页
简 介:H11D1M, H11D2M, H11D3M, 4N38M, MOC8204M High Voltage Phototransistor Optocouplers
September 2007
H11D1M, H11D2M, H11D3M, 4N38M, MOC8204M High Voltage Phototransistor Optocouplers
Features
■ High voltage:
tm
General Description
The H11DXM, 4N38M and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package.
– MOC8204M, BVCER = 400V – H11D1M, H11D2M, BVCER = 300V – H11D3M, BVCER = 200V ■ High isolation voltage: – 7500 VAC peak, 1 second ■ Underwriters Laboratory (UL) recognized File # E90700, Volume 2
Applications
■ Power supply regulators ■ Digital logic inputs ■ Microprocessor inputs ■ Appliance sensor systems ■ Industrial controls
Schematic
ANODE 1
6 BASE
CATHODE 2
5 COLLECTOR
N/C 3
4 EMITTER
2000 Fairchild Semiconductor Corporation H11DXM, 4N38M, MOC8204M Rev. 1.0.2
www.fairchildsemi.com
H11D1M, H11D2M, H11D3M, 4N38M, MOC8204M High Voltage Phototransistor Optocouplers
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only.
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