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H11B3

器件名称: H11B3
功能描述: PHOTODARLINGTON OPTOCOUPLERS
文件大小: 140.38KB    共7页
生产厂商: QT
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简  介:PHOTODARLINGTON OPTOCOUPLERS DESCRIPTION The CNX48U, H11BX, MOC8080 and TIL113 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. CNX48U H11B1 MOC8080 TIL113 H11B2 H11B255 H11B3 FEATURES High sensitivity to low input drive current Meets or exceeds all JEDEC Registered Specifications VDE 0884 approval available as a test option -add option .300. (e.g., H11B1.300) 6 1 6 1 ANODE 1 6 BASE SCHEMATIC APPLICATIONS Low power logic circuits 6 Telecommunications equipment Portable electronics Solid state relays Interfacing coupling systems of different potentials and impedances. CATHODE 2 5 COLLECTOR 1 N/C 3 4 EMITTER Parameter TOTAL DEVICE Storage Temperature Operating Temperature Lead Solder Temperature Total Device Power Dissipation @ TA = 25°C Derate above 25°C EMITTER Continuous Forward Current Reverse Voltage Forward Current - Peak (300 s, 2% Duty Cycle) LED Power Dissipation @ TA = 25°C Derate above 25°C DETECTOR Symbol TSTG TOPR TSOL PD IF VR IF(pk) PD Device All All All All All All All All CNX48U, TIL113 H11B1, H11B2 Value -55 to +150 -55 to +100 260 for 10 sec 250 3.3 100 6 3.0 100 1.8 30 25 55 Units °C °C °C mW mW/°C mA V A mW mW/°C Collector-Emitter Breakdown Voltage BVCEO H11B3 H11B255 MOC8080 CNX48U, H11B1 H11B2, H11B3 V 30 V Collector-Base Breakdown Voltage BVCBO TIL113 H11B255 MOC8080 55 7 150 2.0 V V mW mW/°C Emitter-Collector Breakdown Voltage Detector Power Dissipation @ TA = 25°C Derate ……
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