器件名称: IRFP32N50KPBF
功能描述: HEXFET Power MOSFET ( VDSS = 500V , RDS(on)typ. = 0.135
文件大小: 189.83KB 共8页
简 介:PD - 95052
IRFP32N50KPbF
Applications l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits l Lead-Free
l
SMPS MOSFET VDSS
500V
HEXFET Power MOSFET
RDS(on)typ.
0.135
ID
32A
Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Low RDS(on) Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case ) Mounting torque, 6-32 or M3 screw
TO-247AC
Max.
32 20 130 460 3.7 ± 30 13 -55 to + 150 300
Units
A W W/°C V V/ns
°C 10lb*in (1.1N*m)
Avalanche Characteristics
Symbol
EAS IAR EAR
Parameter
Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy
Typ.
––– ––– –––
Max.
450 32 46
Units
mJ A mJ
Thermal Resistance
Symbol
RθJC RθCS RθJA
Parameter
Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Typ.
––– 0.24 –––
Max.
0.26 ––– 40
Units
°C/W
www.irf.com
1
2/26/04
IRFP32N50KPbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol V(BR)DSS
V(BR)DSS/TJ
RDS(on) VGS(th) IDSS IGSS
Para……
