器件名称: IRFP240
功能描述: 20A, 200V, 0.180 Ohm, N-Channel Power MOSFET
文件大小: 56.75KB 共7页
简 介:IRFP240
Data Sheet July 1999 File Number
2087.4
20A, 200V, 0.180 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power eld effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specied level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17422.
Features
20A, 200V rDS(ON) = 0.180 Single Pulse Avalanche Energy Rated SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
Ordering Information
PART NUMBER IRFP240 PACKAGE TO-247 BRAND IRFP240
Symbol
D
NOTE: When ordering, include the entire part number.
G
S
Packaging
JEDEC STYLE TO-247
SOURCE DRAIN GATE
DRAIN (FLANGE)
4-317
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright Intersil Corporation 1999
IRFP240
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specied IRFP240 200 200 20 12 80 ±20 150 1.2 510 -55 to 150 300 260 UNITS V V A A A V W W/oC mJ oC
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