器件名称: IRFP23N50LPBF
功能描述: HEXFET Power MOSFET ( VDSS = 500V , RDS(on)typ. = 0.190
文件大小: 202.13KB 共9页
简 介:PD - 94999
IRFP23N50LPbF
SMPS MOSFET Applications HEXFET Power MOSFET Zero Voltage Switching SMPS VDSS RDS(on) typ. Trr typ. ID Telecom and Server Power Supplies Uninterruptible Power Supplies 0.190 500V 170ns 23A Motor Control applications Lead-Free Features and Benefits SuperFast body diode eliminates the need for external diodes in ZVS applications. Lower Gate charge results in simpler drive requirements. Enhanced dv/dt capabilities offer improved ruggedness. Higher Gate voltage threshold offers improved noise TO-247AC immunity.
Absolute Maximum Ratings
Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C Continuous Drain Current, VGS @ 10V Pulsed Drain Current PD @TC = 25°C Power Dissipation VGS dv/dt TJ TSTG IDM Max. 23 15 92 370 2.9 ± 30 14 -55 to + 150 300 (1.6mm from case ) 10lb in (1.1N m) W W/°C V V/ns °C A Units
Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and
e
Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw
Diode Characteristics
Symbol
IS ISM VSD trr Qrr IRRM ton
x
x
Parameter
Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Forward Turn-On Time
Min. Typ. Max. Units
––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 170 220 560 7.6 23 A 92 1.5 250 330 840 11 nC A V ns
Conditions
MOSFET symbol showing the integral re……
