器件名称: IRFP17N50LS
功能描述: Power MOSFET(Vdss=500V, Rds(on)typ.=0.28ohm, Id=16A)
文件大小: 118.43KB 共8页
简 介:PD - 94351
IRFP17N50LS
SMPS MOSFET
Applications
l l l l l l l l l l
HEXFET Power MOSFET
Switch Mode Power Supply (SMPS) Uninterruptible Power Supply High Speed Power Switching ZVS and High Frequency Circuit PWM Inverters
VDSS
500V
RDS(on) typ.
0.28
Trr
170ns
ID
16A
Benefits
Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current Low Trr and Soft Diode Recovery High Performance Optimised Anti-parallel Diode
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case ) Mounting Torque, 6-32 or M3 screw
SMD-247
Absolute Maximum Ratings
Max.
16 11 64 220 1.8 ± 30 13 -55 to + 150 300 10
Units
A W W/°C V V/ns
°C lbft.in(N.m)
Diode Characteristics
Symbol IS
ISM
VSD trr Qrr IRRM ton
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Forward Turn-On Time
Min. Typ. Max. Units Conditions D 16 MOSFET symbol ––– ––– showing the A G 64 integral reverse ––– ––– S p-n junction diode. ––– ––– 1.5 V TJ = 25°C, IS = 16A, VGS = 0V ––– 17……
