器件名称: FZTA92
功能描述: PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR
文件大小: 23.97KB 共1页
简 介:SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR
FZTA92
C
ISSUE 2 JANUARY 1996 7 FEATURES * High breakdown voltage APPLICATIONS * Suitable for video output stages in TV sets and switch mode power supplies
E C B
COMPLIMENTARY TYPE PARTMARKING DETAIL
FZTA42 DEVICE TYPE IN FULL
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO Emitter Cut-Off Current IEBO VCE(sat) VBE(sat) Static Forward Current hFE Transfer Ratio Transition Frequency Output Capacitance fT Cobo 25 40 25 50 6 MHz pF * Measured under pulsed conditions. Pulse width=300s. Duty cycle ≤ 2% For typical characteristics graphs see FMMTA92 datasheet. MIN. -300 -300 -5 -0.25 -0.1 -0.5 -0.9 VCBO VCEO VEBO IB IC Ptot Tj:Tstg TYP. MAX. SYMBOL VALUE -300 -300 -5 -100 -500 2 -55 to +150 UNIT V V V
A A
UNIT V V V mA mA W °C CONDITIONS. IC=-100 A, IE=0 IC=-1mA, IB=0* IE=-100 A, IC=0 VCB=-200V, IE=0 VEB=-3V, IC=0 V V IC=-20mA, IB=-2mA IC=-20mA, IB=-2mA IC=-1mA, VCE=-10V* IC=-10mA, VCE=-10V* IC=-30mA, VCE=-10V* IC=-10mA, VCE=-20V f=20MHz VCB=-20V, f=1MHz
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
3 - 305
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