器件名称: FZTA64
功能描述: PNP SILICON PLANAR DARLINGTON TRANSISTORS
文件大小: 58.48KB 共2页
简 介:SOT223 PNP SILICON PLANAR DARLINGTON TRANSISTORS
ISSUE 5– MARCH 2001
FZTA64
4
PARTMARKING DETAILS: COMPLIMENTARY TYPE:
FZTA64 FZTA14 2 1 SOT223 3
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Peak Base Current Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC I BM P tot T j:T stg VALUE -30 -30 -10 -800 -500 -200 2 -55 to +150 UNIT V V V mA mA mA W °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Static Forward Current Transfer Ratio Transition Frequency SYMBOL V (BR)CBO V (BR)CEO V (BR)EBO I CBO I EBO V CE(sat) V BE(sat) h FE fT 10K 20K 125 MHz MIN. -30 -30 -10 -100 -100 -1.5 -2.0 MAX. UNIT V V V nA nA V V CONDITIONS. I C=-10 A, I E=0 I C=-10mA, I B=0* I E=-10 A, I C=0 V CB=-30V, I E=0 V EB=-10V, I C=0 I C=-100mA, I B=-0.1mA* I C=-100mA, I B=-0.1mA* IC=-10mA, V CE=-5V I C=-100mA, V CE=-5V* I C=-50mA, V CE=-5V f=20MHz
*Measured under pulsed conditions. Pulse width=300s. Duty cycle ≤ 2%
TBA
FZTA64
TYPICAL CHARACTERISTICS
1.5
+25° C
1.5
IC/IB=1000
VCE(sat) - (V)
VCE(sat) - (V)
1.0
1.0
0.5
IC/IB=1000
0.5
-55 °C +25 °C +100 °C
0 1m 10m 100m 1 10
0 1m ……
