器件名称: FZTA14
功能描述: NPN SILICON PLANAR DARLINGTON TRANSISTOR
文件大小: 23.68KB 共1页
简 介:SOT223 NPN SILICON PLANAR DARLINGTON TRANSISTOR
FZTA14
C E C B SOT223 SYMBOL VCES VCBO VCEO VEBO IC Ptot Tj:Tstg VALUE 30 30 30 10 1 2 -55 to +150 UNIT V V V V A W °C
ISSUE 3 JANUARY 1996 PARTMARKING DETAIL:COMPLEMENTARY TYPE :FZTA64 DEVICE TYPE IN FULL
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Emitter Voltage Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER Collector-Base Breakdown Voltage Collector Cut-Off Current SYMBOL V(BR)CES ICBO MIN. 30 100 100 Emitter Cut-Off Current IEBO Collector-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Base-Emitter Saturation Voltage VCE(sat) VBE(on) VBE(sat) Static Forward Current hFE Transfer Ratio Transition Frequency fT 10K 20K 5K 170 MHz *Measured under pulsed conditions. Pulse Width=300s. Duty cycle ≤2% Spice parameter data is available upon request for this device For typical characteristics graphs see FMMT38C datasheet. 3 - 301 1.5 1.6 2.0 2.0 2.2 TYP. MAX. UNIT V nA nA V V V V V CONDITIONS. IC=100 A, VBE=0 VCB=30V, IE=0 VEB=10V, IC=0 IC=100mA, IB=0.1mA* IC=1A, IB=1mA* IC=100mA, VCE=5V* IC=100mA, IB=0.1mA IC=1A, IB=1mA IC=10mA, VCE=5V* IC=100mA, VCE=5V* IC=1A, VCE=5V* IC=50mA, VCE=5V* f=20MHz
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