器件名称: FZT969
功能描述: SOT223 NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTOR
文件大小: 27.71KB 共2页
简 介:FZT869
MAX. V IC=100A IC=1A, RB ≤1k PARTMARKING DETAILS V V IE=100A IC=10mA* FZT869 V UNIT CONDITIONS. C
SOT223 NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTOR
FZT869
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
TYP.
Collector-Base Breakdown Voltage
V(BR)CBO
60
120
Collector-Emitter Breakdown Voltag
V(BR)CER
60
120
ISSUE 2 - JANUARY 1996 FEATURES * Extremely low equivalent on-resistance; RCE(sat)36m at 5A * 7 Amp continuous collector current (20 Amp peak) * Very low saturation voltages * Excellent gain charateristics specified upto 20 Amp * Ptot =3 Watts B
E C
Collector-Emitter Breakdown Voltage
V(BR)CEO
25
35
Emitter-Base Breakdown Voltage
V(BR)EBO
6
8
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg VALUE 60 25 6 20 7 3 -55 to +150 UNIT V V V A A W °C
Collector Cut-Off Current
A
ICBO 50 1 10 50 110 215 350 1.2 1.13 IC=10mA, VCE=1V IC=1A, VCE=1V* IC=7A, VCE=1V* IC=20A, VCE=2V* MHz pF ns ns IC=1A, IB1=100mA IB2=100mA, VCC=10V VCB=10V, f=1MHz* IC=100mA, VCE=10V f=50MHz V IC=6.5A, VCE=1V* V IC=6.5A, IB=300mA mV mV mV mV IC=0.5A, IB=10mA* IC=1A, IB=10mA* IC=2A, IB=10mA* IC=6.5A, IB=150mA* nA VEB=6V nA A VCB=50V VCB=50V, Tamb=100°C
50 1
nA
VCB=50V VCB=50V, Tamb=100°C
Collector……
