器件名称: FZT949
功能描述: PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS
文件大小: 216.5KB 共5页
简 介:SOT223 PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS
ISSUE 2 - NOVEMBER 1995 FEATURES * Extremely low equivalent on-resistance; RCE(sat) * 6 Amps continuous current * Up to 20 Amps peak current * Very low saturation voltage * Excellent hFE characteristics specified upto 20 Amps
FZT948 FZT949
C
E C
PARTMARKING DETAILS — DEVICE TYPE IN FULL
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC P tot T j:Tstg -6 3 -55 to +150 FZT948 -40 -20 -6 -20 -5.5 FZT949 -50 -30 UNIT V V V A A W °C
*The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 4 square inch minimum
TBA
FZT948
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current SYMBOL V (BR)CBO V (BR)CER V (BR)CEO V (BR)EBO I CBO MIN. -40 -40 -20 -6 TYP. -55 -55 -30 -8 -50 -1 -50 -1 -10 -60 -110 -200 -360 -1050 -870 100 100 75 60 15 200 200 160 130 40 80 163 120 126 -130 -180 -280 -450 -1200 -1050 MAX. UNIT V V V V nA A nA A nA mV mV mV mV mV mV CONDITIONS. I C=-100 A I C =-1 A, RB ≤ 1k I C=-10mA* I E=-100 A V CB=-30V V CB=-30V, T amb=100°C V CB=-30V V ……
