器件名称: FZT853
功能描述: NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS
文件大小: 53.38KB 共3页
简 介:SOT223 NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS
ISSUE 2 - OCTOBER 1995 FEATURES C
FZT851 FZT853
* * * *
Extremely low equivalent on-resistance; RCE(sat) 44m at 5A 6 Amps continuous current, up to 20 Amps peak current Very low saturation voltages Excellent hFE characteristics specified up to 10 Amps
E C B
PARTMARKING DETAILS COMPLEMENTARY TYPES -
DEVICE TYPE IN FULL FZT851 FZT951 FZT853 FZT953
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC P tot T j:T stg FZT851 150 60 6 20 6 3 -55 to +150 FZT853 200 100 6 10 UNIT V V V A A W °C
*The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 4 square inch minimum
3 - 260
FZT851
TYPICAL CHARACTERISTICS
FZT851
ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated)
MAX. V
0.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.01 0.1 1 10 VCE=5V VCE=1V
PARAMETER I C=100 A I C =1 A, RB ≤ 1k
0.6
SYMBOL
MIN.
TYP.
UNIT
CONDITIONS.
Collector-Base Breakdown Voltage V V
0.4 IC/IB=10 IC/IB=50
V (BR)CBO
150
220
Collector-Emitter Breakdown Voltage
VCE(sat) - (Volts)
V (BR)CER I C=10mA* I E=100 A
0.2 0 0.01 100 0.1 1 10
150
220
300
Collector-Emitter Breakdown Voltage V
V (BR)CEO
60
85
200
Emitter-Base Breakdown Voltage 50……
