器件名称: FZT849
功能描述: NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTOR
文件大小: 60.52KB 共3页
简 介:FZT849
MAX. V IC=100A IC=1A, RB ≤1k IC=10mA* IE=100A PARTMARKING DETAILS COMPLEMENTARY TYPE FZT849 FZT949 V V V UNIT CONDITIONS. C
SOT223 NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTOR
FZT849
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
TYP.
Collector-Base Breakdown Voltage
V(BR)CBO
80
120
Collector-Emitter Breakdown Voltage
V(BR)CER
80
120
ISSUE 3 - JANUARY 1996 FEATURES * Extremely low equivalent on-resistance; RCE(sat)36m at 5A * 7 Amp continuous collector current (20 Amp peak) * Very low saturation voltages * Excellent gain charateristics specified upto 20 Amp * Ptot =3 Watts B
E C
Collector-Emitter Breakdown Voltage
V(BR)CEO
30
40
Emitter-Base Breakdown Voltage
V(BR)EBO
6
8
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg VALUE 80 30 6 20 7 3 -55 to +150 UNIT V V V A A W °C
Collector Cut-Off Current
A
ICBO 50 1 10 50 110 215 350 1.2 1.13 300 IC=10mA, VCE=1V IC=1A, VCE=1V* IC=7A, VCE=1V* IC=20A, VCE=2V* MHz pF ns ns IC=1A, IB1=100mA IB2=100mA, VCC=10V VCB=10V, f=1MHz* IC=100mA, VCE=10V f=50MHz V IC=6.5A, VCE=1V* V IC=6.5A, IB=300mA mV mV mV mV IC=0.5A, IB=20mA* IC=1A, IB=20mA* IC=2A, IB=20mA* IC=6.5A, IB=300mA* nA VEB=6V nA A VCB=70V VCB=70V, Tamb=100°C
50 1
nA
VCB=70V……
