器件名称: FZT796
功能描述: PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
文件大小: 78.54KB 共2页
简 介:FZT796A FZT796A
C
SOT223 PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
TYPICAL CHARACTERISTICS
-55°C +25°C +100°C +175°C
1.8
1.6
1.4
IC/IB=40 IC/IB=20 IC/IB=10 IC/IB=20
Tamb=25°C
1.8
1.6
E C B SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg VALUE -200 -200 -5 -1 -0.5 2 -55 to +150 UNIT V V V A A W °C
- (Volts)
1.2
1.4 1.2
- (Volts)
1.0
1.0
ISSUE 3 - OCTOBER 1995 FEATURES * 200 Volt VCEO * Gain of 250 at IC=0.3 Amps * Very low saturation voltage APPLICATIONS * Battery powered circuits COMPLEMENTARY TYPE FZT696B PARTMARKING DETAIL FZT796A
0.8
0.8
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage
0.01 0.1 1 10
V
0.6
0.6
V
0.4
0.4
0.2 0 0.001
0.01
0.1
1
10
0.2 0 0.001
Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER
IC - Collector Current (Amps)
I+ - Collector Current (Amps)
1.6
+100°C +25°C -55°C
VCE=10V IC/IB=10
-55°C +25°C +100°C +175°C
750
1.6
1.4 1.2
1.4
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
1.2
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) -200 -200 -5 -0.1 -0.1 -0.2 -0.3 -0.3 V V V
A A
- Typical Gain
- Normalised Gain
0.8
- (Volts)
1.0
500
1.0
0.8
IC=-100 A IC=-10mA* IE=-100 A VCB=-150V VEB=-4V V V V IC=-50mA, IB=-2mA* IC=-100mA, IB=-5mA* IC=-200mA, IB=-20mA*
0.6
250
0.6
Breakdown Voltage Collector-Base Collector-Emitter Emitter-Base Col……
