器件名称: FZT792
功能描述: PNP SILICON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR
文件大小: 76.96KB 共3页
简 介:SOT223 PNP SILICON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR
FZT792A
C
ISSUE 3 - NOVEMBER 1995 FEATURES * High gain and Very low saturation voltage APPLICATIONS * Battery powered circuits
E C B FZT692B FZT792A SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg VALUE -75 -70 -5 -5 -2 2 -55 to +150
COMPLEMENTARY TYPE PARTMARKING DETAIL -
ABSOLUTE MAXIMUM RATINGS
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range UNIT V V V A A W °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
PARAMETER Breakdown Voltages SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO Cut-Off Currents ICBO MIN. -75 -70 -5 TYP. -100 -90 -8.5 -0.1 -10 IEBO Saturation Voltages VCE(sat) -0.30 -0.30 -0.30 VBE(sat) -0.80 -0.1 -0.45 -0.50 -0.50 -0.95 MAX. UNIT V V V
A A A
CONDITIONS. IC=-100 A IC=-10mA* IE=-100 A VCB=-40V VCB=-40V, Tamb=100°C VEB=-4V V V V V IC=-500mA, IB=-5mA* IC=-1A, IB=-25mA* IC=-2A, IB=-200mA* IC=-1A, IB=-25mA*
3 - 250
FZT792A
TYPICAL CHARACTERISTICS
CONDITIONS. IC=-1A, VCE=-2V*
1.6 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 1.4 1.2 0.8 0.6 0.4 0.2 0 0.01 0.1 1 10
-55°C +25°C +100°C +175°C
FZT792A
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
MAX. UNIT V 800
1.0 1.8 IC/IB=40 IC/IB=20 IC/IB=10 Tamb=25°C 1.8
PARAMETER
SYMBOL
MIN.
TYP.
Base-Emitter Turn-On Voltage
- (Volts)
VBE(on) IC=-10mA, VCE=-2V* IC=-500mA, VCE=-2V* IC=-1A, VCE=-2V*
V - (Volts)
-0.75
IC/IB=100
Stati……
