器件名称: FZT751
功能描述: PNP SILICON PLANAR HIGH PERFORMANCE TRANSISTOR
文件大小: 97.03KB 共2页
简 介:FZT751 FZT751
C
SOT223 PNP SILICON PLANAR HIGH PERFORMANCE TRANSISTOR
TYPICAL CHARACTERISTICS
IB1 =IB2=IC/10
0.6
td
tr
tf
ts
ISSUE 2 FEBRUARY 1995 FEATURES * 60 Volt VCEO * 3 Amp continuous current * Low saturation voltage COMPLEMENTARY TYPE PARTMARKING DETAIL FZT751 FZT651 B
0.5
ns
ns
140
700
E C
0.4
ts td
IC /I B =10
120
600
- (Volts)
100 tf tr
500
0.3
80
400
0.2
V
60
300
40
200
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
0.1 1
Switching time
0.1
20
100
SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg
VALUE -80 -60 -5 -6 -3 2 -55 to +150
UNIT V V V A A W °C
0
0
0
0.0001
0.001
0.01
0.1
1
10
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range
I - Collector Current (Amps) I - Collector Current (Amps)
C
C
VCE(sat) v IC Switching Speeds
1.4
225
1.2
175 IC /I B=10
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
TYP. MAX. SYMBOL MIN. V(BR)CBO -80 UNIT V CONDITIONS. IC=-100A
- Gain
125
h
- (Volts)
VCE =2V
1.0
0.8
V
75
V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE
-60 -5
V V
IC=-10mA* IE=100A
0.6
0 0.0001 0.001 0.1 1 10 0.01
0.01
0.1
1
10
I - Collector Current (Amps) I - Collector Current (Amps)
C
C
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current
hFE v IC VBE(sat) ……
