器件名称: FZT696B
功能描述: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
文件大小: 98.58KB 共2页
简 介:FZT696B FZT696B
C
SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
TYPICAL CHARACTERISTICS
IC/IB=50
IC/IB=100
0.8
IC/IB=10
IC/IB=50
Tamb=25°C
0.8
-55°C +25°C +100°C +175°C
E C B
- (Volts)
- (Volts)
0.6
0.6
0.4
ISSUE 4 FEBRUARY 1997 FEATURES * 250 Volt VCEO * Gain of 500 at IC=100mA * Very low saturation voltage APPLICATIONS * Darlington replacement * Battery powered circuits PARTMARKING DETAIL FZT696B
0.4
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage
0.01 0.1 1 10
V
0.2
V
0.2
SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg
VALUE 180 180 5 1 0.5 2 -55 to +150
UNIT V V V A A W °C
0
0
0.01
0.1
1
10
I+ - Collector Current (Amps)
I+ - Collector Current (Amps)
Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range
VCE(sat) v IC
VCE(sat) v IC
1.6 IC/IB=50
VCE=5V
1.4
+100°C +25°C -55°C
-55°C +25°C +100°C +175°C
1.5K
1.6
1.4
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage
1.2
1.2
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) 180 180 5 0.1 0.1 0.2 0.2 0.25 V V V
A A
1.0
1K
0.8
- (Volts)
1.0
IC=100 A IC=10mA* IE=100 A VCB=140V VEB=4V V V V IC=50mA, IB=0.5mA* IC=100mA, IB=2mA* IC=200mA, IB=5mA*
0.8
0.6
- Normalised Gain
V
0.4
- Typical Gain
500
0.6
0.2
h
……
