器件名称: FZT692B
功能描述: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
文件大小: 92.54KB 共2页
简 介:FZT692B
ISSUE 3 - OCTOBER 1995 C
SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
FZT692B
TYPICAL CHARACTERISTICS
-55°C +25°C +100°C +175°C
0.8
IC/IB=200 IC/IB=100 IC/IB=10 IC/IB=100
Tamb=25°C
E C B SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg VALUE 70 70 5 5 2 2 -55 to +150 TYP. MAX. UNIT TEST CONDITIONS. UNIT V V V A A W °C
0.8
- (Volts)
- (Volts)
0.6
0.6
FEATURES * High Gain + Very low saturation voltage APPLICATIONS * Darlington replacement * Relay drivers, DC-DC converters PARTMARKING DETAIL FZT692B
0.4
0.4
ABSOLUTE MAXIMUM RATINGS
PARAMETER Collector-Base Voltage Collector-Emitter Voltage
0.01 0.1 1 10
V
0.2
V
0.2
0
0.01
0.1
1
10
0
I+ - Collector Current (Amps)
I+ - Collector Current (Amps)
Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range
VCE(sat) v IC
VCE(sat) v IC
1.6 IC/IB=100
VCE=2V
-55°C +25°C +100°C +175°C
+100°C +25°C -55°C
1.5K
1.6
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
PARAMETER SYMBOL MIN. BreakdownVoltages V(BR)CBO 70 V(BR)CEO 70 V(BR)EBO 5 Cut-Off Currents ICBO IEBO Saturation Voltages VCE(sat) VBE(sat) Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Input Capacitance Output Capacitance Switching Times VBE(on) hFE fT Cibo Cobo
1.4 1.2
1.4
0.8
- (Volts)
1.0
1K
1.2
500
- Typical Gain
0.6
1.0 0.8
V V V 0.1 0.1 0.15 0.5 0.5 0.9 0.9
A A
IC=100 A IC=10mA* IE=100 A VCB=55V V……
