器件名称: FZT688B
功能描述: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
文件大小: 97.11KB 共2页
简 介:FZT688B FZT688B
C
SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
TYPICAL CHARACTERISTICS
IC/IB=100
0.8
IC/IB=200 IC/IB=100 IC/IB=10
-55°C +25°C +100°C +175°C
Tamb=25°C
0.8
ISSUE 3 - OCTOBER 1995 FEATURES * Extremely low equivalent on resistance; RCE(sat) 83m at 3A * Gain of 400 at IC=3 Amps and very low saturation voltage APPLICATIONS * Flash gun convertors & Battery powered circuits PARTMARKING DETAIL COMPLEMENTARY TYPE FZT688B FZT788B SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg VALUE 12 12 5 10 4 2 -55 to +150
E C B UNIT V V V A A W °C
- (Volts)
0.4
- (Volts)
0.6
0.6
0.4
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage
0.01 0.1 1 I+ - Collector Current (Amps) 10
V
0.2
V
0.2
0
0.01 0.1 1 I+ - Collector Current (Amps)
10
0
Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range
VCE(sat) v IC
VCE(sat) v IC
1.6 IC/IB=100
+100°C +25°C -55°C
-55°C +25°C +100°C +175°C
VCE=2V
1.5K
1.6
1.4 1.2
1.4
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
PARAMETER Breakdown Voltages
0.8
- (Volts)
1.0
1K
1.2
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. V(BR)CBO 12 V(BR)CEO V(BR)EBO 12 5 ICBO IEBO VCE(sat) 0.1 0.1 0.04 0.06 0.18 0.35 0.40 V V V
A A
1.0
IC=100 A IC=10mA* IE=100 A VCB=10V VEB=4V V V V V V IC=0.1A, IB=1mA IC=0.1A,IB=0.5mA* IC=1A, IB=50mA* IC=3A, IB=20mA* IC=4A, IB=50mA*
- Normalised Gain
V
500
- Typical Gain
0.6
0……
