器件名称: FZT653
功能描述: NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR
文件大小: 96.54KB 共2页
简 介:FZT653 FZT653
C FZT753 E PARTMARKING DETAIL
VCE=2V
SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR
ISSUE 3 FEBRUARY 1995 FEATURES * Low saturation voltage COMPLEMENTARY TYPE FZT653 B
TYPICAL CHARACTERISTICS
0.6
0.5
225
0.4
IC/IB=10
C
175
- (Volts)
- Gain
0.3
0.2
125
V
0.1
h
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage
0.01 0.1 1 10
75
SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg TYP. MAX.
VALUE 120 100 5 6 2 2 -55 to +150
UNIT V V V A A W °C
0
0.0001
0.001
0.01
0.1
1
10
25
Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb =25°C Operating and Storage Temperature Range
IC - Collector Current (Amps) IC - Collector Current (Amps)
VCE(sat) v IC
hFE v IC
1.4
1.2
1.2
- (Volts)
1.0 VCE=2V
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
SYMBOL MIN. 120 V(BR)CBO UNIT V CONDITIONS. IC=100A
1.0
IC/IB=10
V
0.8
V
- (Volts)
0.8
0.6
V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE
100 5
V V
A A A
IC=10mA* IE=100A
0.6
0.4 0.0001 0.001 0.1 1 10 0.01
0.0001
0.001
0.01
0.1
1
10
IC - Collector Current (Amps) IC - Collector Current (Amps)
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current
VBE(sat) v IC VBE(on) v IC
10
IB1=IB2=IC/10
Single Pulse Test at T
amb
=25°C
td
tr
0.13 0.23 0.9 0.8
0.1 10 0.1 0.3 0.5 1.25 1.0
V V V V
V……
