器件名称: FZT600
功能描述: NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR
文件大小: 100.69KB 共2页
简 介:FZT600 FZT600
C ISSUE 3 FEBRUARY 1997 FEATURES * 2A continuous current * 140 VOLT VCEO * Guaranteed hFE Specified up to 1A
V
SOT223 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR
TYPICAL CHARACTERISTICS
Group B
20k
1.00
16k
+-=10V
PART MARKING DETAIL
FZT600 B
E C
0.90
- (Volts)
0.80
h
- Gain
I /I =100
+ *
12k
ABSOLUTE MAXIMUM RATINGS.
Group A
8k
V
0.70
4k
0.60 0.01 0.1 1 10
0
0.01
0.1
1
10
0.001
I+ - Collector Current (Amps) I+ - Collector Current (Amps)
VCE(sat) v IC
hFE v IC
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation Operating and Storage Temperature Range SYMBOL V(BR)CBO MIN. 160 TYP.
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
MAX. UNIT V CONDITIONS. IC=100A
SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg
VALUE 160 140 10 4 2 2 -55 to +150
UNIT V V V A A W °C
1.8
1.5
1.6 V
1.4
V(BR)CEO V(BR)EBO ICBO
140 10 0.01 10
V V
A A A A
IC=10mA* IE=100A VCB=140V VCB=140V, Tamb=100°C
- (Volts)
+-=5V
I /I =100
- (Volts)
1.4
+ *
1.3
V
V
1.2
1.2
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current
1.0 0.01 0.1 1 10
0.01
0.1
1
10
1.1
I+ - Collector Current (Amps) I+ - Collector Current (Amps)
ICES IEBO VCE(sat) VBE(sat) VBE(on) hFE
VBE(sat) v IC VBE(on) v IC
0.75 0.85 1.7 1.5
10 0.1 1.1 1.2 1.9 1.7 100k GROUP B……
