器件名称: FZT3019
功能描述: NPN General Purpose Amplifier
文件大小: 181.91KB 共4页
简 介:FZT3019 NPN General Purpose Amplifier
April 2006
FZT3019
NPN General Purpose Amplifier
Features
This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 500 mA and collector voltages up to 80 V. Sourced from process 12.
1 2 4
tm
3
SOT-223
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings * T
Symbol
VCEO VCBO VEBO IC TJ, Tstg
NOTES:
a
= 25°C unless otherwise noted
Parameter
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector current - Continuous Junction and Storage Temperature
Value
80 140 7.0 1.0 -55 ~ +150
Units
V V V A °C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol Off Characteristics V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO hFE Parameter Test Condition IC = 30 mA, IB = 0 IC = 100 A, IE = 0 IE = 100 A, IC = 0 VCB = 90 V, IE = 0 VCB = 90 V, IE = 0, Ta = 150°C VEB = 5 V, IC = 0.1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 150 mA, VCE = 10 V IC = 500 mA, VCE = 10 V IC = 1.0 A, VCE = 10 V IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA IC = 150 mA, IB = 15 mA IC = 50 mA, VCE = 10 V, f = 20 MHz VCB = 10 V, IE = 0, f = 1.0 MHz VBE = 0.5 V, IE ……
