器件名称: FZT2222A
功能描述: SOT223 NPN SILICON PLANAR SWITCHING TRANSISTOR
文件大小: 43.85KB 共2页
简 介:FZT2222A FZT2222A
C FZT2907A FZT2222A B SYMBOL VCBO VCEO VEBO IC Ptot Tj:Tstg VALUE MIN. Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current
200
SOT223 NPN SILICON PLANAR SWITCHING TRANSISTOR
ISSUE 3 - OCTOBER 1995 FEATURES * 40 Volt VCEO * Fast switching COMPLEMENTARY TYPE PARTMARKING DETAIL -
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
UNIT MHz pF pF VEB=0.5V, IC=0 f=140KHz VCB=10V, IE=0, f=140KHz CONDITIONS.
PARAMETER
SYMBOL
VALUE
MIN. IC=20mA, VCE=20V f=100MHz
MAX.
Transition Frequency
fT
300
E C
Output Capacitance
Cobo
8
Input Capacitance
Cibo
25
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER SYMBOL VALUE 75 40 5 600 2 -55 to+150 UNIT MAX. V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO Collector-Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Static Forward Current Transfer Ratio ICEX VCE(sat) VBE(sat) hFE 0.6 75 40 6 10 10 10 10 V V V nA
A
Delay Time Rise Time ns ns ns
td
10
ns
UNIT V V V mA W °C CONDITIONS.
tr
25
Storage Time
ts
225
Fall Time
tf
60
VCE=30V, VBE(off) =0.5V IC=150mA, IB1=15mA (See Delay Test Circuit) VCE=30V, IC=150mA IB1= IB2=15mA (See Storage Test Circuit)
DELAY AND RISE TEST CIRCUIT
+30V
ELECTRI……
