器件名称: FZT1149A
功能描述: PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
文件大小: 93.84KB 共4页
简 介:PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
ISSUE 1 - JANUARY 1997 FEATURES * VCEO= -25V * 4 Amp Continuous Current * 10 Amp Pulse Current * Low Saturation voltage * High Gain
FZT1149A
C
E C B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC IB P tot T j:T stg VALUE -30 -25 -5 -10 -4 -500 2.5 -55 to +150
SOT223
UNIT V V V A A mA W °C
The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 2 inches x 2 inches
FZT1149A
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C ).
VALUE
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage
SYMBOL MIN. V(BR)CBO VCES VCEO VCEV -30 -25 -25 -25 -5 TYP. -70 -60 -60 -60 -8.5 -0.3 -0.3 -0.3 -45 -100 -140 -170 -230 -960 -860 270 250 195 115 450 400 320 190 50 135 50 150 270 -100 -100 -100 -80 -170 -240 -260 -350 -1050 -1000 MAX.
UNIT V V V V V nA nA nA mV mV mV mV mV mV mV
CONDITIONS. IC=-100A IC=-100A IC=-10mA * IC=-100A, VEB=+1V IE=-100A VCB=-24V VEB=-4V VCE=-20V IC=-0.1A, IB=-1.0mA* IC=-0.5A, IB=-3mA* IC=-1A, IB=-7mA* IC=-2A, IB=-30mA* IC=-4A, IB=-140mA* IC=-4A, IB=-140mA* IC=-4A, VCE=-2V* IC=-10mA, VCE=-2V* IC=-0.5A, VCE=-2V* IC=-2A, VCE=-2V* IC=-5A, V……
