器件名称: FZT1053A
功能描述: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
文件大小: 63.71KB 共4页
简 介:SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
ISSUE 2 - MARCH 2001 FEATURES * * * * * * VCEO = 75V 4.5 Amp Continuous Current 10 Amp Pulse Current Low Saturation Voltage High Gain Extremely Low Equivalent On-resistance; RCE(sat) = 78m at 4.5A
FZT1053A
C
E C B SOT223
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC IB P tot T j:T stg VALUE 150 75 7.5 10 4.5 500 2.5 -55 to +150 UNIT V V V A A mA W °C
The power which can be dissipated assuming the device is mounted in typical manner on a PCB with copper equal to 2 inches x 2 inches.
FZT1053A
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current SYMBOL MIN. V (BR)CBO V CES V CEO V CEV V (BR)EBO I CBO 150 150 75 150 7.5 TYP. 250 250 100 250 8.8 0.9 0.3 1.5 21 55 150 160 350 900 825 270 300 300 40 440 450 450 60 20 162 10 10 10 30 75 200 210 440 1000 950 MAX. V V V V V nA nA nA mV mV mV mV mV mV mV
UNIT CONDITIONS.
I C=100 A I C =100 A I C =10mA I C =100 A, V EB=1V I E=100 A V CB=120V V EB=4V V CES =120V I C=0.2A, I B=20mA* I C=0.5A, I B=20mA* I C=1A, I B=10mA* I C=2A, I ……
