器件名称: FZT1051A
功能描述: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
文件大小: 46.49KB 共3页
简 介:SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
ISSUE 4 - FEBRUARY 1998 FEATURES * * * * * * VCEO = 40V 5 Amp Continuous Current 20 Amp Pulse Current Low Saturation Voltage High Gain Extremely Low Equivalent On-resistance; RCE(sat) = 50m at 5A
FZT1051A
C
E C B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC IB P tot T j:T stg VALUE 150 40 5 10 5 500 2.5 -55 to +150 UNIT V V V A A mA W °C
The power which can be dissipated assuming the device is mounted in typical manner on a PCB with copper equal to 2 inches x 2 inches.
FZT1051A
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage SYMBOL MIN. V(BR)CBO 150 TYP. 190 MAX. UNIT V CONDITIONS. IC=100A IC=100A * IC=10mA IC=100A, VEB=1V IE=100A
VCES
150
190
V
VCEO
40
60
V
VCEV
150
190
V
Emitter-Base Breakdown V(BR)EBO Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Emitter Cut-Off Current Collector-Emitter Saturation Voltage ICBO IEBO ICES
5
9
V
0.3 0.3 0.3
10 10 10
nA nA nA
VCB=120V VEB=4V VCES=120V
VCE(sat)
17 85 140 250 980
25 120 180 340 1100
mV mV mV mV mV
IC=0.2A, IB=10mA* IC=1A, I……
