器件名称: FZT1048A
功能描述: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
文件大小: 132.01KB 共3页
简 介:NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
ISSUE 1- FEBRUARY 1997 FEATURES * * * * * * VCEO = 17.5V 5 Amp Continuous Current 20 Amp Pulse Current Low Saturation Voltage High Gain Extremely Low Equivalent On-resistance; RCE(sat) = 50m at 5A
FZT1048A
C
E C B SOT223
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at T amb=25°C SYMBOL V CBO V CEO V EBO I CM IC IB P tot T j:T stg VALUE 50 17.5 5 20 5 500 2.5 -55 to +150 UNIT V V V A A mA W °C
Operating and Storage Temperature Range
The power which can be dissipated assuming the device is mounted in typical manner on a PCB with copper equal to 2 inches x 2 inches.
FZT1048A
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
VALUE PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Emitter Cut-Off Current V(BR)CBO 50 TYP. 85 MAX. V IC=100A IC=100A* IC=10mA IC=100A, VEB=1V IE=100A VCB=35V VEB=4V VCE=35V IC=0.5A, IB=10mA* IC=1A, IB=10mA* IC=3A, IB=15mA* IC=5A, IB=25mA* IC=5A, IB=25mA* UNIT CONDITIONS.
VCES
50
85
V
VCEO
17.5
24
V
VCEV
50
85
V
V(BR)EBO
5
8.7
V
ICBO IEBO ICES
0.3 0.3 0.3
10 10 10
nA nA nA
Collector-Emitter Saturation VCE(sat) Volta……
